I_DSXv1rev 52011-08-31IEC 60747-8 (II.4.3.2) (1984)

drain cut-off current

0112/2///61360_4#AAE371

maximum guaranteed drain cut-off current of a field-effect transistor at specified drain-source voltage, gate-source voltage and source-substrate voltage

Used by classes: 1

property

Also appears in1#

Entities with the same name in other dictionaries:

IEC CDD reference dictionaryAAE371Propertie

Code: AAE371
Data type: LEVEL(MAX) OF REAL_MEASURE_TYPE
Unit: UAA101 UAA101
Condition: {0112/2///61360_4#AAE376, 0112/2///61360_4#AAE381, 0112/2///61360_4#AAE388}

Used by classes (1)

AAA126field-effect transistor

All properties24#

Version: 1
Revision: 5
Preferred name: drain cut-off current
Short name: I_DSX
Definition: maximum guaranteed drain cut-off current of a field-effect transistor at specified drain-source voltage, gate-source voltage and source-substrate voltage
Definition source: IEC 60747-8 (II.4.3.2) (1984)
Definition class: 0112/2///61360_4#AAA001component
Unit structure: A
Drawing reference: NR3 S..3.3ES2
Value format: {0112/2///61360_4#AAE376,0112/2///61360_4#AAE381,0112/2///61360_4#AAE388}
Initial value: 0112/2///62720#UAA101 UAA101
Responsible committee: SC3D
Publisher: IEC
Published in: IEC 61360-4
Published in: DEPENDENT_P_DET
Status level: Standard
Version release date: 2015-08-17
Revision release date: 2011-08-31
Version initiation date: 2015-08-17
Original definition date: 1996-08-01
MDC_P001_6: 0112/2///61360_4#AAE371drain cut-off current
MDC_P022: LEVEL(MAX) OF REAL_MEASURE_TYPE
MDC_P025_1: I_DSX}
MDC_P040: E01