|$DV_GS|v1rev 52011-08-31

gate-source voltage difference

0112/2///61360_4#AAE383

maximum absolute value of the difference in direct gate-source voltages of a dual field-effect transistor at specified drain current and drain-gate voltage

Used by classes: 1

property

Also appears in1#

Entities with the same name in other dictionaries:

IEC CDD reference dictionaryAAE383Propertie

Code: AAE383
Data type: LEVEL(MAX) OF REAL_MEASURE_TYPE
Unit: UAA296 UAA296
Condition: {0112/2///61360_4#AAE367, 0112/2///61360_4#AAE375}

Used by classes (1)

AAA130field-effect small signal transistor

All properties23#

Version: 1
Revision: 5
Preferred name: gate-source voltage difference
Short name: |$DV_GS|
Definition: maximum absolute value of the difference in direct gate-source voltages of a dual field-effect transistor at specified drain current and drain-gate voltage
Definition class: 0112/2///61360_4#AAA001component
Unit structure: V
Drawing reference: NR3..3.3ES2
Value format: {0112/2///61360_4#AAE367,0112/2///61360_4#AAE375}
Initial value: 0112/2///62720#UAA296 UAA296
Responsible committee: SC3D
Publisher: IEC
Published in: IEC 61360-4
Published in: DEPENDENT_P_DET
Status level: Standard
Version release date: 2015-08-17
Revision release date: 2011-08-31
Version initiation date: 2015-08-17
Original definition date: 1996-08-01
MDC_P001_6: 0112/2///61360_4#AAE383gate-source voltage difference
MDC_P022: LEVEL(MAX) OF REAL_MEASURE_TYPE
MDC_P025_1: |Δ V_GS}|
MDC_P040: E06