V_GSthv1rev 52011-08-31IEC 60747-8 (II.4.3.1) (1984)

gate-source threshold voltage

0112/2///61360_4#AAE384

value as specified by level (minTypmax) of the direct threshold voltage between gate and source terminals of an enhancement field-effect transistor at specified drain current and drain-source voltage

Used by classes: 1

property

Also appears in1#

Entities with the same name in other dictionaries:

IEC CDD reference dictionaryAAE384Propertie

Code: AAE384
Data type: LEVEL(MIN,MAX,TYP) OF INT_MEASURE_TYPE
Unit: UAA296 UAA296
Condition: {0112/2///61360_4#AAE367, 0112/2///61360_4#AAE376}

Used by classes (1)

AAA126field-effect transistor

All properties25#

Version: 1
Revision: 5
Preferred name: gate-source threshold voltage
Short name: V_GSth
Definition: value as specified by level (minTypmax) of the direct threshold voltage between gate and source terminals of an enhancement field-effect transistor at specified drain current and drain-source voltage
Definition source: IEC 60747-8 (II.4.3.1) (1984)
Definition class: 0112/2///61360_4#AAA001component
Unit structure: V
Drawing reference: NR1 S..4
Value format: {0112/2///61360_4#AAE367,0112/2///61360_4#AAE376}
Initial value: 0112/2///62720#UAA296 UAA296
Responsible committee: SC3D
Publisher: IEC
Published in: IEC 61360-4
Published in: DEPENDENT_P_DET
Status level: Standard
Version release date: 2015-08-17
Revision release date: 2011-08-31
Version initiation date: 2015-08-17
Original definition date: 1996-08-01
MDC_P001_6: 0112/2///61360_4#AAE384gate-source threshold voltage
MDC_P022: LEVEL(MIN,MAX,TYP) OF INT_MEASURE_TYPE
MDC_P025_1: V_GSth}
MDC_P025_3: V_GS(T)}
MDC_P040: E06