V_GSoffv1rev 52011-08-31IEC 60747-8 (II.4.3.1) (1984)

gate-source cut-off voltage

0112/2///61360_4#AAE386

value as specified by level (minTypmax) of the gate-source cut-off voltage of a depletion field-effect transistor at specified drain current, drain-source voltage and temperature of a temperature type

Used by classes: 1

property

Also appears in1#

Entities with the same name in other dictionaries:

IEC CDD reference dictionaryAAE386Propertie

Code: AAE386
Data type: LEVEL(MIN,MAX,TYP) OF INT_MEASURE_TYPE
Unit: UAA296 UAA296
Condition: {0112/2///61360_4#AAE367, 0112/2///61360_4#AAE376, 0112/2///61360_4#AAE683, 0112/2///61360_4#AAE685}

Used by classes (1)

AAA126field-effect transistor

All properties25#

Version: 1
Revision: 5
Preferred name: gate-source cut-off voltage
Short name: V_GSoff
Definition: value as specified by level (minTypmax) of the gate-source cut-off voltage of a depletion field-effect transistor at specified drain current, drain-source voltage and temperature of a temperature type
Definition source: IEC 60747-8 (II.4.3.1) (1984)
Definition class: 0112/2///61360_4#AAA001component
Unit structure: V
Drawing reference: NR1 S..4
Value format: {0112/2///61360_4#AAE367,0112/2///61360_4#AAE376,0112/2///61360_4#AAE683,0112/2///61360_4#AAE685}
Initial value: 0112/2///62720#UAA296 UAA296
Responsible committee: SC3D
Publisher: IEC
Published in: IEC 61360-4
Published in: DEPENDENT_P_DET
Status level: Standard
Version release date: 2015-08-17
Revision release date: 2011-08-31
Version initiation date: 2015-08-17
Original definition date: 1996-08-01
MDC_P001_6: 0112/2///61360_4#AAE386gate-source cut-off voltage
MDC_P022: LEVEL(MIN,MAX,TYP) OF INT_MEASURE_TYPE
MDC_P025_1: V_GSoff}
MDC_P025_3: V_(P)GS}
MDC_P040: E06