d($DV_GS)/dTv1rev 52011-08-31

thermal drift gate-source voltage

0112/2///61360_4#AAE389

maximum absolute value of the thermal drift of the gate-source voltage difference of a dual field-effect transistor at specified drain-gate voltage, drain current and ambient temperature

Used by classes: 1

property

Also appears in1#

Entities with the same name in other dictionaries:

IEC CDD reference dictionaryAAE389Propertie

Code: AAE389
Data type: LEVEL(MAX) OF REAL_MEASURE_TYPE
Unit: UAB173 UAB173
Condition: {0112/2///61360_4#AAE014, 0112/2///61360_4#AAE367, 0112/2///61360_4#AAE375}

Used by classes (1)

AAA130field-effect small signal transistor

All properties23#

Version: 1
Revision: 5
Preferred name: thermal drift gate-source voltage
Short name: d($DV_GS)/dT
Definition: maximum absolute value of the thermal drift of the gate-source voltage difference of a dual field-effect transistor at specified drain-gate voltage, drain current and ambient temperature
Definition class: 0112/2///61360_4#AAA001component
Unit structure: V/K
Drawing reference: NR3..3.3ES2
Value format: {0112/2///61360_4#AAE014,0112/2///61360_4#AAE367,0112/2///61360_4#AAE375}
Initial value: 0112/2///62720#UAB173 UAB173
Responsible committee: SC3D
Publisher: IEC
Published in: IEC 61360-4
Published in: DEPENDENT_P_DET
Status level: Standard
Version release date: 2015-08-17
Revision release date: 2011-08-31
Version initiation date: 2015-08-17
Original definition date: 1996-08-01
MDC_P001_6: 0112/2///61360_4#AAE389thermal drift gate-source voltage
MDC_P022: LEVEL(MAX) OF REAL_MEASURE_TYPE
MDC_P025_1: |d(Δ V_GS})/dT|
MDC_P040: E06