R_DSonv1rev 52011-08-31IEC 60747-8 (II.4.3.4) (1984)
drain-source on-state resistance
0112/2///61360_4#AAE391
value as specified by level (minTypmax) of the dc resistance between the drain and source terminals of a field-effect transistor with a specified gate-source voltage applied to bias the device to the on-state, a specified drain current and temperature of a temperature type
- Used by classes
- 1
Also appears in2#
Entities with the same name in other dictionaries:
- Code
AAE391- Data type
- LEVEL(MIN,MAX,TYP) OF REAL_MEASURE_TYPE
- Unit
- UAA017 UAA017
- Condition
{0112/2///61360_4#AAE367, 0112/2///61360_4#AAE381, 0112/2///61360_4#AAE683, 0112/2///61360_4#AAE685}
All properties24#
- Version
- 1
- Revision
- 5
- Preferred name
- drain-source on-state resistance
- Short name
- R_DSon
- Definition
- value as specified by level (minTypmax) of the dc resistance between the drain and source terminals of a field-effect transistor with a specified gate-source voltage applied to bias the device to the on-state, a specified drain current and temperature of a temperature type
- Definition source
- IEC 60747-8 (II.4.3.4) (1984)
- Definition class
- 0112/2///61360_4#AAA001component
- Unit structure
- Ω
- Drawing reference
- NR3..3.3ES2
- Value format
- {0112/2///61360_4#AAE367,0112/2///61360_4#AAE381,0112/2///61360_4#AAE683,0112/2///61360_4#AAE685}
- Initial value
- 0112/2///62720#UAA017 UAA017
- Responsible committee
- SC3D
- Publisher
- IEC
- Published in
- IEC 61360-4
- Published in
- DEPENDENT_P_DET
- Status level
- Standard
- Version release date
- 2015-08-17
- Revision release date
- 2011-08-31
- Version initiation date
- 2015-08-17
- Original definition date
- 1996-08-01
- MDC_P022
- LEVEL(MIN,MAX,TYP) OF REAL_MEASURE_TYPE
- MDC_P025_1
- R_DSon}
- MDC_P040
- E33