r_ds(on)v1rev 52011-08-31IEC 60747-8 (II.4.3.4) (1984)
drain-source on-state resistance
0112/2///61360_4#AAE393
maximum small-signal resistance between the drain and source terminals of a unipolar field effect transistor with a specified gate-source voltage applied to bias the device in the on-state, and at specified drain-source voltage, source-substrate voltage and frequency
- Used by classes
- 1
Also appears in2#
Entities with the same name in other dictionaries:
- Code
AAE393- Data type
- LEVEL(MAX) OF REAL_MEASURE_TYPE
- Unit
- UAA017 UAA017
- Condition
{0112/2///61360_4#AAE029, 0112/2///61360_4#AAE376, 0112/2///61360_4#AAE381, 0112/2///61360_4#AAE388}
All properties24#
- Version
- 1
- Revision
- 5
- Preferred name
- drain-source on-state resistance
- Short name
- r_ds(on)
- Definition
- maximum small-signal resistance between the drain and source terminals of a unipolar field effect transistor with a specified gate-source voltage applied to bias the device in the on-state, and at specified drain-source voltage, source-substrate voltage and frequency
- Definition source
- IEC 60747-8 (II.4.3.4) (1984)
- Definition class
- 0112/2///61360_4#AAA001component
- Unit structure
- Ω
- Drawing reference
- NR3..3.3ES2
- Value format
- {0112/2///61360_4#AAE029,0112/2///61360_4#AAE376,0112/2///61360_4#AAE381,0112/2///61360_4#AAE388}
- Initial value
- 0112/2///62720#UAA017 UAA017
- Responsible committee
- SC3D
- Publisher
- IEC
- Published in
- IEC 61360-4
- Published in
- DEPENDENT_P_DET
- Status level
- Standard
- Version release date
- 2015-08-17
- Revision release date
- 2011-08-31
- Version initiation date
- 2015-08-17
- Original definition date
- 1996-08-01
- MDC_P022
- LEVEL(MAX) OF REAL_MEASURE_TYPE
- MDC_P025_1
- r_ds(on)}
- MDC_P040
- E33