R_DSoffv1rev 52011-08-31IEC 60747-8 (II.4.3.4) (1984)

drain-source off-state resistance

0112/2///61360_4#AAE394

minimum dc resistance between drain and source terminals of a field-effect transistor with a specified gate-source voltage to bias the device in the off-state, and specified drain-source voltage and source-substrate voltage

Used by classes: 1

property

Also appears in1#

Entities with the same name in other dictionaries:

IEC CDD reference dictionaryAAE394Propertie

Code: AAE394
Data type: LEVEL(MIN) OF REAL_MEASURE_TYPE
Unit: UAA017 UAA017
Condition: {0112/2///61360_4#AAE376, 0112/2///61360_4#AAE381, 0112/2///61360_4#AAE388}

Used by classes (1)

AAA126field-effect transistor

All properties24#

Version: 1
Revision: 5
Preferred name: drain-source off-state resistance
Short name: R_DSoff
Definition: minimum dc resistance between drain and source terminals of a field-effect transistor with a specified gate-source voltage to bias the device in the off-state, and specified drain-source voltage and source-substrate voltage
Definition source: IEC 60747-8 (II.4.3.4) (1984)
Definition class: 0112/2///61360_4#AAA001component
Unit structure: Ω
Drawing reference: NR3..3.3ES2
Value format: {0112/2///61360_4#AAE376,0112/2///61360_4#AAE381,0112/2///61360_4#AAE388}
Initial value: 0112/2///62720#UAA017 UAA017
Responsible committee: SC3D
Publisher: IEC
Published in: IEC 61360-4
Published in: DEPENDENT_P_DET
Status level: Standard
Version release date: 2015-08-17
Revision release date: 2011-08-31
Version initiation date: 2015-08-17
Original definition date: 1996-08-01
MDC_P001_6: 0112/2///61360_4#AAE394drain-source off-state resistance
MDC_P022: LEVEL(MIN) OF REAL_MEASURE_TYPE
MDC_P025_1: R_DSoff}
MDC_P040: E33