I_Csatv1rev 52011-08-31
collector saturation current
0112/2///61360_4#AAE641
maximum collector current at which the collector-emitter and base-emitter saturation voltages of a switching bipolar transistor are given at specified dc saturation current gain and ambient temperature
- Used by classes
- 1
Also appears in1#
Entities with the same name in other dictionaries:
- Code
AAE641- Data type
- LEVEL(MAX) OF REAL_MEASURE_TYPE
- Unit
- UAA101 UAA101
- Condition
{0112/2///61360_4#AAE014, 0112/2///61360_4#AAE952}
All properties24#
- Version
- 1
- Revision
- 5
- Preferred name
- collector saturation current
- Short name
- I_Csat
- Definition
- maximum collector current at which the collector-emitter and base-emitter saturation voltages of a switching bipolar transistor are given at specified dc saturation current gain and ambient temperature
- Note
- At I_Csat} the switching properties should also be characterised in a resistive circuit (t_d}, t_r}, t_s} and t_f}) using the same value for +I_B} and -I_B} as the base current used for V_Cesat} and V_Besat}.
- Definition class
- 0112/2///61360_4#AAA001component
- Unit structure
- A
- Drawing reference
- NR2..3.3
- Value format
- {0112/2///61360_4#AAE014,0112/2///61360_4#AAE952}
- Initial value
- 0112/2///62720#UAA101 UAA101
- Responsible committee
- SC3D
- Publisher
- IEC
- Published in
- IEC 61360-4
- Published in
- DEPENDENT_P_DET
- Status level
- Standard
- Version release date
- 2015-08-17
- Revision release date
- 2011-08-31
- Version initiation date
- 2015-08-17
- Original definition date
- 1996-08-01
- MDC_P022
- LEVEL(MAX) OF REAL_MEASURE_TYPE
- MDC_P025_1
- I_Csat}
- MDC_P040
- E01