C_igv1rev 52011-08-31IEC 60747-8 (III.3.1.9) (1984)
input capacitance at gate
0112/2///61360_4#AAE655
maximum input capacitance at the gate of an N-channel field-effect transistor at specified drain current, drain-source voltage, gate-source voltage and frequency
- Used by classes
- 1
Also appears in1#
Entities with the same name in other dictionaries:
- Code
AAE655- Data type
- LEVEL(MAX) OF REAL_MEASURE_TYPE
- Unit
- UAA144 UAA144
- Condition
{0112/2///61360_4#AAE029, 0112/2///61360_4#AAE367, 0112/2///61360_4#AAE376, 0112/2///61360_4#AAE381}
All properties24#
- Version
- 1
- Revision
- 5
- Preferred name
- input capacitance at gate
- Short name
- C_ig
- Definition
- maximum input capacitance at the gate of an N-channel field-effect transistor at specified drain current, drain-source voltage, gate-source voltage and frequency
- Definition source
- IEC 60747-8 (III.3.1.9) (1984)
- Definition class
- 0112/2///61360_4#AAA001component
- Unit structure
- F
- Drawing reference
- NR3..3.3ES2
- Value format
- {0112/2///61360_4#AAE029,0112/2///61360_4#AAE367,0112/2///61360_4#AAE376,0112/2///61360_4#AAE381}
- Initial value
- 0112/2///62720#UAA144 UAA144
- Responsible committee
- SC3D
- Publisher
- IEC
- Published in
- IEC 61360-4
- Published in
- DEPENDENT_P_DET
- Status level
- Standard
- Version release date
- 2015-08-17
- Revision release date
- 2011-08-31
- Version initiation date
- 2015-08-17
- Original definition date
- 1996-08-01
- MDC_P022
- LEVEL(MAX) OF REAL_MEASURE_TYPE
- MDC_P025_1
- C_ig}
- MDC_P040
- E09