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G_UMv1rev 52011-08-31

unilateral power gain

0112/2///61360_4#AAE713

value as specified by level (minTypmax) of the power gain of a bipolar transistor, considered as a four-terminal network, conjugately matched at its output terminals, assuming the s_re} (reverse transmission coefficient at common emitter configuration) is zero at specified collector-emitter voltage, collector current, frequency and temperature of a temperature type

Used by classes
1
property

Also appears in1#

Entities with the same name in other dictionaries:

Code
AAE713
Data type
LEVEL(MIN,MAX,TYP) OF REAL_MEASURE_TYPE
Unit
UAA409 UAA409
Condition
{0112/2///61360_4#AAE029, 0112/2///61360_4#AAE406, 0112/2///61360_4#AAE412, 0112/2///61360_4#AAE683, 0112/2///61360_4#AAE685}
Used by classes (1)

All properties23#

Version
1
Revision
5
Preferred name
unilateral power gain
Short name
G_UM
Definition
value as specified by level (minTypmax) of the power gain of a bipolar transistor, considered as a four-terminal network, conjugately matched at its output terminals, assuming the s_re} (reverse transmission coefficient at common emitter configuration) is zero at specified collector-emitter voltage, collector current, frequency and temperature of a temperature type
Unit structure
dB
Drawing reference
NR2..3.3
Value format

{0112/2///61360_4#AAE029,0112/2///61360_4#AAE406,0112/2///61360_4#AAE412,0112/2///61360_4#AAE683,0112/2///61360_4#AAE685}

Initial value
0112/2///62720#UAA409 UAA409
Responsible committee
SC3D
Publisher
IEC
Published in
IEC 61360-4
Published in
DEPENDENT_P_DET
Status level
Standard
Version release date
2015-08-17
Revision release date
2011-08-31
Version initiation date
2015-08-17
Original definition date
1996-08-01
MDC_P022
LEVEL(MIN,MAX,TYP) OF REAL_MEASURE_TYPE
MDC_P025_1
G_UM}
MDC_P040
E49