$Dg_os/g_fsv1rev 52011-08-31

difference in penetration factor

0112/2///61360_4#AAE716

value as specified by level (minTypmax) of the ratio of the change of gate-source voltage difference to the change of drain-gate voltage of a dual field-effect transistor at specified constant drain current, drain-gate voltage and temperature of temperature type

Used by classes: 1

property

Also appears in1#

Entities with the same name in other dictionaries:

IEC CDD reference dictionaryAAE716Propertie

Code: AAE716
Data type: LEVEL(MIN,MAX,TYP) OF INT_MEASURE_TYPE
Unit: UAD862 UAD862
Condition: {0112/2///61360_4#AAE367, 0112/2///61360_4#AAE375, 0112/2///61360_4#AAE683, 0112/2///61360_4#AAE685}

Used by classes (1)

AAA130field-effect small signal transistor

All properties23#

Version: 1
Revision: 5
Preferred name: difference in penetration factor
Short name: $Dg_os/g_fs
Definition: value as specified by level (minTypmax) of the ratio of the change of gate-source voltage difference to the change of drain-gate voltage of a dual field-effect transistor at specified constant drain current, drain-gate voltage and temperature of temperature type
Definition class: 0112/2///61360_4#AAA001component
Unit structure: V/V
Drawing reference: NR1 S..4
Value format: {0112/2///61360_4#AAE367,0112/2///61360_4#AAE375,0112/2///61360_4#AAE683,0112/2///61360_4#AAE685}
Initial value: 0112/2///62720#UAD862 UAD862
Responsible committee: SC3D
Publisher: IEC
Published in: IEC 61360-4
Published in: DEPENDENT_P_DET
Status level: Standard
Version release date: 2015-08-17
Revision release date: 2011-08-31
Version initiation date: 2015-08-17
Original definition date: 1996-08-01
MDC_P001_6: 0112/2///61360_4#AAE716difference in penetration factor
MDC_P022: LEVEL(MIN,MAX,TYP) OF INT_MEASURE_TYPE
MDC_P025_1: Δ g_os}/g_fs}
MDC_P040: E06