|$D1/g_fs|v1rev 52011-08-31

difference in transfer impedance

0112/2///61360_4#AAE717

value as specified by level (minTypmax) of the ratio of the change of gate-source voltage difference to the change of drain current of a dual field-effect transistor at specified constant drain current, drain-gate voltage and temperature of a temperature type

Used by classes: 1

property

Also appears in1#

Entities with the same name in other dictionaries:

IEC CDD reference dictionaryAAE717Propertie

Code: AAE717
Data type: LEVEL(MIN,MAX,TYP) OF INT_MEASURE_TYPE
Unit: UAA017 UAA017
Condition: {0112/2///61360_4#AAE367, 0112/2///61360_4#AAE375, 0112/2///61360_4#AAE683, 0112/2///61360_4#AAE685}

Used by classes (1)

AAA130field-effect small signal transistor

All properties23#

Version: 1
Revision: 5
Preferred name: difference in transfer impedance
Short name: |$D1/g_fs|
Definition: value as specified by level (minTypmax) of the ratio of the change of gate-source voltage difference to the change of drain current of a dual field-effect transistor at specified constant drain current, drain-gate voltage and temperature of a temperature type
Definition class: 0112/2///61360_4#AAA001component
Unit structure: Ω
Drawing reference: NR1 S..4
Value format: {0112/2///61360_4#AAE367,0112/2///61360_4#AAE375,0112/2///61360_4#AAE683,0112/2///61360_4#AAE685}
Initial value: 0112/2///62720#UAA017 UAA017
Responsible committee: SC3D
Publisher: IEC
Published in: IEC 61360-4
Published in: DEPENDENT_P_DET
Status level: Standard
Version release date: 2015-08-17
Revision release date: 2011-08-31
Version initiation date: 2015-08-17
Original definition date: 1996-08-01
MDC_P001_6: 0112/2///61360_4#AAE717difference in transfer impedance
MDC_P022: LEVEL(MIN,MAX,TYP) OF INT_MEASURE_TYPE
MDC_P025_1: |Δ 1/g_fs}|
MDC_P040: E44