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t_offv1rev 52011-08-31

turn-off time

0112/2///61360_4#AAE979

value as specified by level (minTypmax) of the time, measured between the 90% value of the gate-source voltage change and the 10% value of the drain current swing of a field-effect transistor at reference conditions

Used by classes
2
property
Code
AAE979
Data type
LEVEL(MIN,MAX,TYP) OF REAL_MEASURE_TYPE
Unit
UAA972 UAA972
Condition
0112/2///61360_4#AAE995
Used by classes (2)

All properties24#

Version
1
Revision
5
Preferred name
turn-off time
Short name
t_off
Definition
value as specified by level (minTypmax) of the time, measured between the 90% value of the gate-source voltage change and the 10% value of the drain current swing of a field-effect transistor at reference conditions
Remark
1. The internal generator resistance and the gate-source resistance are assumed to be 50 ohm.|2. t_off} = t_d(off)} + t_f}. t_d(off)} is also known as t_s} (storage time).|3. The reference conditions at specifying times for field-effect transistors are normally:| - drain-source voltage| - gate-source voltage| - drain current (dc)| - reference temperature
Unit structure
s
Drawing reference
NR3..3.3ES2
Value format
{0112/2///61360_4#AAE995}
Initial value
0112/2///62720#UAA972 UAA972
Responsible committee
SC3D
Publisher
IEC
Published in
IEC 61360-4
Published in
DEPENDENT_P_DET
Status level
Standard
Version release date
2015-08-17
Revision release date
2011-08-31
Version initiation date
2015-08-17
Original definition date
1996-08-01
MDC_P022
LEVEL(MIN,MAX,TYP) OF REAL_MEASURE_TYPE
MDC_P025_1
t_off}
MDC_P040
T07