t_d(on)v1rev 52011-08-31
delay (on) time
0112/2///61360_4#AAE980
value as specified by level (minTypmax) of the time, measured between the 10% value of the gate-source voltage change and the 10% value of the drain current swing of a field-effect transistor at reference conditions
- Used by classes
- 2
Also appears in2#
Entities with the same name in other dictionaries:
- Code
AAE980- Data type
- LEVEL(MIN,MAX,TYP) OF REAL_MEASURE_TYPE
- Unit
- UAA972 UAA972
- Condition
0112/2///61360_4#AAE995
All properties25#
- Version
- 1
- Revision
- 5
- Preferred name
- delay (on) time
- Short name
- t_d(on)
- Definition
- value as specified by level (minTypmax) of the time, measured between the 10% value of the gate-source voltage change and the 10% value of the drain current swing of a field-effect transistor at reference conditions
- Remark
- 1. The internal generator resistance and gate-source resistance are assumed to be 50 ohm.| 2. The reference conditions at specifying times for field-effect transistors are normally:| - drain-source voltage| - gate-source voltage| - drain current (dc)| - reference temperature
- Definition class
- 0112/2///61360_4#AAA001component
- Unit structure
- s
- Drawing reference
- NR3..3.3ES2
- Value format
- {0112/2///61360_4#AAE995}
- Initial value
- 0112/2///62720#UAA972 UAA972
- Responsible committee
- SC3D
- Publisher
- IEC
- Published in
- IEC 61360-4
- Published in
- DEPENDENT_P_DET
- Status level
- Standard
- Version release date
- 2015-08-17
- Revision release date
- 2011-08-31
- Version initiation date
- 2015-08-17
- Original definition date
- 1996-08-01
- MDC_P001_6
- 0112/2///61360_4#AAE980delay (on) time
- MDC_P022
- LEVEL(MIN,MAX,TYP) OF REAL_MEASURE_TYPE
- MDC_P025_1
- t_d(on)}
- MDC_P025_3
- t_d}
- MDC_P040
- T07