I_EBOv1rev 52011-08-31JEDEC 77/D9/1.2 (1981)
emitter cut-off current I_EBO
0112/2///61360_4#AAF110
value as specified by level (minTypmax) of the direct current into the emitter terminal of a bipolar transistor when it is biased in the reverse direction with respect to the base terminal and when the collector terminal is open-circuited, at specified values of emitter-base voltage and temperature of a temperature type
- Used by classes
- 1
Also appears in1#
Entities with the same name in other dictionaries:
- Code
AAF110- Data type
- LEVEL(MIN,MAX,TYP) OF REAL_MEASURE_TYPE
- Unit
- UAA101 UAA101
- Condition
{0112/2///61360_4#AAE427, 0112/2///61360_4#AAE683, 0112/2///61360_4#AAE685}
All properties25#
- Version
- 1
- Revision
- 5
- Preferred name
- emitter cut-off current I_EBO
- Short name
- I_EBO
- Definition
- value as specified by level (minTypmax) of the direct current into the emitter terminal of a bipolar transistor when it is biased in the reverse direction with respect to the base terminal and when the collector terminal is open-circuited, at specified values of emitter-base voltage and temperature of a temperature type
- Definition source
- JEDEC 77/D9/1.2 (1981)
- Remark
- The emitter terminal is considered to be biased in the reverse direction when it is made positive for NPN transistors or negative for PNP transistors with respect to the base terminal.
- Definition class
- 0112/2///61360_4#AAA001component
- Unit structure
- A
- Drawing reference
- NR3..3.3ES2
- Value format
- {0112/2///61360_4#AAE427,0112/2///61360_4#AAE683,0112/2///61360_4#AAE685}
- Initial value
- 0112/2///62720#UAA101 UAA101
- Responsible committee
- SC3D
- Publisher
- IEC
- Published in
- IEC 61360-4
- Published in
- DEPENDENT_P_DET
- Status level
- Standard
- Version release date
- 2015-08-17
- Revision release date
- 2011-08-31
- Version initiation date
- 2015-08-17
- Original definition date
- 1996-08-01
- MDC_P022
- LEVEL(MIN,MAX,TYP) OF REAL_MEASURE_TYPE
- MDC_P025_1
- I_EBO}
- MDC_P040
- E01