V_BEsatv1rev 52011-08-31IEC 60148 (II.3.1) (1969)

base-emitter saturation voltage

0112/2///61360_4#AAF114

value as specified by level (minTypmax) of the base-emitter voltage of a bipolar transistor at specified collector current, base current and temperature of a temperature type

Used by classes: 1

property

Also appears in1#

Entities with the same name in other dictionaries:

IEC CDD reference dictionaryAAF114Propertie

Code: AAF114
Data type: LEVEL(MIN,MAX,TYP) OF REAL_MEASURE_TYPE
Unit: UAA296 UAA296
Condition: {0112/2///61360_4#AAE406, 0112/2///61360_4#AAE409, 0112/2///61360_4#AAE683, 0112/2///61360_4#AAE685}

Used by classes (1)

AAA119bipolar transistor

All properties25#

Version: 1
Revision: 5
Preferred name: base-emitter saturation voltage
Short name: V_BEsat
Definition: value as specified by level (minTypmax) of the base-emitter voltage of a bipolar transistor at specified collector current, base current and temperature of a temperature type
Definition source: IEC 60148 (II.3.1) (1969)
Note: This is the voltage between base and emitter terminals when both the base-emitter and base-collector junctions are forward biased.
Definition class: 0112/2///61360_4#AAA001component
Unit structure: V
Drawing reference: NR2 S..3.3
Value format: {0112/2///61360_4#AAE406,0112/2///61360_4#AAE409,0112/2///61360_4#AAE683,0112/2///61360_4#AAE685}
Initial value: 0112/2///62720#UAA296 UAA296
Responsible committee: SC3D
Publisher: IEC
Published in: IEC 61360-4
Published in: DEPENDENT_P_DET
Status level: Standard
Version release date: 2015-08-17
Revision release date: 2011-08-31
Version initiation date: 2015-08-17
Original definition date: 1996-08-01
MDC_P001_6: 0112/2///61360_4#AAF114base-emitter saturation voltage
MDC_P022: LEVEL(MIN,MAX,TYP) OF REAL_MEASURE_TYPE
MDC_P025_1: V_BEsat}
MDC_P040: E06