t_rfv1rev 52011-08-31JEDEC 100(02.05.13) (1986)

refresh time interval

0112/2///61360_4#AAF331

maximum time interval between the beginnings of successive signals that are intended to restore the level in a DRAM cell to its original level, in a temperature range between specified temperatures (T_1} and T_2})

Used by classes: 1

property

Also appears in1#

Entities with the same name in other dictionaries:

IEC CDD reference dictionaryAAF331Propertie

Code: AAF331
Data type: LEVEL(MAX) OF REAL_MEASURE_TYPE
Unit: UAA972 UAA972
Condition: {0112/2///61360_4#AAE958, 0112/2///61360_4#AAE959}

Used by classes (1)

AAA068dynamic RAM IC

All properties25#

Version: 1
Revision: 5
Preferred name: refresh time interval
Short name: t_rf
Definition: maximum time interval between the beginnings of successive signals that are intended to restore the level in a DRAM cell to its original level, in a temperature range between specified temperatures (T_1} and T_2})
Definition source: JEDEC 100(02.05.13) (1986)
Definition class: 0112/2///61360_4#AAA001component
Unit structure: s
Drawing reference: NR3..3.3ES2
Value format: {0112/2///61360_4#AAE958,0112/2///61360_4#AAE959}
Initial value: 0112/2///62720#UAA972 UAA972
Responsible committee: SC3D
Publisher: IEC
Published in: IEC 61360-4
Published in: DEPENDENT_P_DET
Status level: Standard
Version release date: 2015-08-17
Revision release date: 2011-08-31
Version initiation date: 2015-08-17
Original definition date: 1996-08-01
MDC_P001_6: 0112/2///61360_4#AAF331refresh time interval
MDC_P022: LEVEL(MAX) OF REAL_MEASURE_TYPE
MDC_P025_1: t_rf}
MDC_P025_3: t_ref}
MDC_P040: T07