I_GESv1rev 42013-04-24IEC 60747-9 2007
gate-emitter leakage current
0112/2///61360_4#AFD063
leakage current into the gate terminal at a specified gate-emitter voltage with the collector terminal short-circuited to the emitter terminal
- Used by classes
- 1
Also appears in1#
Entities with the same name in other dictionaries:
- Code
AFD063- Data type
- LEVEL(TYP,MAX) OF REAL_MEASURE_TYPE
- Unit
- UAA101 UAA101
All properties17#
- Version
- 1
- Revision
- 4
- Preferred name
- gate-emitter leakage current
- Short name
- I_GES
- Definition
- leakage current into the gate terminal at a specified gate-emitter voltage with the collector terminal short-circuited to the emitter terminal
- Definition source
- IEC 60747-9 2007
- Definition class
- 0112/2///61360_4#AFA015insulated-gate bipolar transistor
- Unit structure
- A
- Initial value
- 0112/2///62720#UAA101 UAA101
- Published in
- NON_DEPENDENT_P_DET
- Status level
- Standard
- Version release date
- 2015-08-17
- Revision release date
- 2013-04-24
- Version initiation date
- 2015-08-17
- MDC_P022
- LEVEL(TYP,MAX) OF REAL_MEASURE_TYPE
- MDC_P025_1
- I_GES