t_d(on)v1rev 42013-04-24IEC 60747-9 2007
turn-on delay time
0112/2///61360_4#AFD068
time interval between the start of a voltage applied to the gate terminal that switches the IGBT from the off-state to the on-state and the start of the rise of the collector current
- Used by classes
- 1
Also appears in1#
Entities with the same name in other dictionaries:
- Code
AFD068- Data type
- LEVEL(TYP,MAX) OF REAL_MEASURE_TYPE
- Unit
- UAA972 UAA972
All properties18#
- Version
- 1
- Revision
- 4
- Preferred name
- turn-on delay time
- Short name
- t_d(on)
- Definition
- time interval between the start of a voltage applied to the gate terminal that switches the IGBT from the off-state to the on-state and the start of the rise of the collector current
- Definition source
- IEC 60747-9 2007
- Note
- Usually, the time is measured between points corresponding to 10 % of the input and output pulse amplitudes.
- Definition class
- 0112/2///61360_4#AFA015insulated-gate bipolar transistor
- Unit structure
- s
- Initial value
- 0112/2///62720#UAA972 UAA972
- Published in
- NON_DEPENDENT_P_DET
- Status level
- Standard
- Version release date
- 2015-08-17
- Revision release date
- 2013-04-24
- Version initiation date
- 2015-08-17
- MDC_P022
- LEVEL(TYP,MAX) OF REAL_MEASURE_TYPE
- MDC_P025_1
- t_d(on)