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T_jv1rev 52011-08-31IEC 60747-1 (IV.5.2.3) (1983)

junction temperature

0112/2///61360_4#AAE337

maximum junction temperature of a transistor, diode, trigger device, optoelectronic device or IC

Used by classes
5
property

Also appears in3#

Code
AAE337
Data type
LEVEL(MAX) OF INT_MEASURE_TYPE
Unit
UAA033 UAA033
Used by classes (5)

Version history5#

  1. Current rev 05
    21 Dec 2024 · 18:46 UTC by BATCH 00001336
    View on cdd.iec.ch ↗
  2. superseded rev 04
    23 Jul 2015 · 11:08 UTC by BATCH 00000907
    ↓ Version JSON
    View on cdd.iec.ch ↗
  3. superseded rev 03
    22 Jul 2015 · 14:21 UTC by BATCH 00000904
    ↓ Version JSON
    View on cdd.iec.ch ↗
  4. superseded rev 02
    30 May 2012 · 15:03 UTC by BATCH 00000788
    ↓ Version JSON
    View on cdd.iec.ch ↗
  5. superseded rev 01
    30 May 2012 · 14:53 UTC by BATCH 00000787
    ↓ Version JSON
    View on cdd.iec.ch ↗

IEC CDD records every published revision of each entity — version number, status, timestamp, and the change request that introduced it. OpenCDD captures the full chain of custody from cdd.iec.ch; the entry marked Current is the one rendered on this page.

All properties23#

Version
1
Revision
5
Preferred name
junction temperature
Short name
T_j
Definition
maximum junction temperature of a transistor, diode, trigger device, optoelectronic device or IC
Definition source
IEC 60747-1 (IV.5.2.3) (1983)
Unit structure
°C
Drawing reference
NR1..4
Initial value
0112/2///62720#UAA033 UAA033
Responsible committee
IEC/SC 3D
Publisher
IEC
Published in
IEC 61360-4
Published in
NON_DEPENDENT_P_DET
Status level
Standard
Version release date
2024-12-21
Revision release date
2011-08-31
Version initiation date
2015-08-17
Original definition date
1996-08-01
MDC_P022
LEVEL(MAX) OF INT_MEASURE_TYPE
MDC_P025_1
T_j}
MDC_P040
H02