I_SDXv1rev 52011-08-31IEC 60747-8 (II.4.3.2) (1984)
source cut-off current
0112/2///61360_4#AAE373
maximum guaranteed source cut-off current of a field-effect transistor at specified drain-source voltage, drain-gate voltage and drain-substrate voltage
- Used by classes
- 1
Also appears in1#
Entities with the same name in other dictionaries:
- Code
AAE373- Data type
- LEVEL(MAX) OF REAL_MEASURE_TYPE
- Unit
- UAA101 UAA101
Version history5#
IEC CDD records every published revision of each entity — version number, status, timestamp, and the change request that introduced it. OpenCDD captures the full chain of custody from cdd.iec.ch; the entry marked Current is the one rendered on this page.
All properties24#
- Version
- 1
- Revision
- 5
- Preferred name
- source cut-off current
- Short name
- I_SDX
- Definition
- maximum guaranteed source cut-off current of a field-effect transistor at specified drain-source voltage, drain-gate voltage and drain-substrate voltage
- Definition source
- IEC 60747-8 (II.4.3.2) (1984)
- Definition class
- 0112/2///61360_4#AAA001component
- Unit structure
- A
- Drawing reference
- NR3 S..3.3ES2
- Value format
- {0112/2///61360_4#AAE375,0112/2///61360_4#AAE376,0112/2///61360_4#AAE378}
- Initial value
- 0112/2///62720#UAA101 UAA101
- Responsible committee
- SC3D
- Publisher
- IEC
- Published in
- IEC 61360-4
- Published in
- DEPENDENT_P_DET
- Status level
- Standard
- Version release date
- 2015-08-17
- Revision release date
- 2011-08-31
- Version initiation date
- 2015-08-17
- Original definition date
- 1996-08-01
- MDC_P022
- LEVEL(MAX) OF REAL_MEASURE_TYPE
- MDC_P025_1
- I_SDX}
- MDC_P040
- E01