R_DSonv1rev 52011-08-31IEC 60747-8 (II.4.3.4) (1984)

drain-source on-state resistance

0112/2///61360_4#AAE391

value as specified by level (minTypmax) of the dc resistance between the drain and source terminals of a field-effect transistor with a specified gate-source voltage applied to bias the device to the on-state, a specified drain current and temperature of a temperature type

Used by classes: 1

property

Also appears in2#

Entities with the same name in other dictionaries:

Code: AAE391
Data type: LEVEL(MIN,MAX,TYP) OF REAL_MEASURE_TYPE
Unit: UAA017 UAA017

Used by classes (1)

AAA126field-effect transistor

Version history5#

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All properties24#

Version: 1
Revision: 5
Preferred name: drain-source on-state resistance
Short name: R_DSon
Definition: value as specified by level (minTypmax) of the dc resistance between the drain and source terminals of a field-effect transistor with a specified gate-source voltage applied to bias the device to the on-state, a specified drain current and temperature of a temperature type
Definition source: IEC 60747-8 (II.4.3.4) (1984)
Definition class: 0112/2///61360_4#AAA001component
Unit structure: Ω
Drawing reference: NR3..3.3ES2
Value format: {0112/2///61360_4#AAE367,0112/2///61360_4#AAE381,0112/2///61360_4#AAE683,0112/2///61360_4#AAE685}
Initial value: 0112/2///62720#UAA017 UAA017
Responsible committee: SC3D
Publisher: IEC
Published in: IEC 61360-4
Published in: DEPENDENT_P_DET
Status level: Standard
Version release date: 2015-08-17
Revision release date: 2011-08-31
Version initiation date: 2015-08-17
Original definition date: 1996-08-01
MDC_P001_6: 0112/2///61360_4#AAE391drain-source on-state resistance
MDC_P022: LEVEL(MIN,MAX,TYP) OF REAL_MEASURE_TYPE
MDC_P025_1: R_DSon}
MDC_P040: E33