|Y_fs|v1rev 52011-08-31

transfer admittance

0112/2///61360_4#AAE396

value as specified by level (minTypmax) of the modulus of the transfer admittance of a field effect transistor at specified frequency, drain current, gate-source voltage and drain-source voltage

Used by classes: 1

property

Also appears in1#

Entities with the same name in other dictionaries:

iec-61360-4AAE396Propertie

Code: AAE396
Data type: LEVEL(MIN,MAX,TYP) OF REAL_MEASURE_TYPE
Unit: UAA972 UAA972

Used by classes (1)

AAA126field-effect transistor

Version history5#

IEC CDD records every published revision of each entity — version number, status, timestamp, and the change request that introduced it. OpenCDD captures the full chain of custody from cdd.iec.ch; the entry marked Current is the one rendered on this page.

All properties23#

Version: 1
Revision: 5
Preferred name: transfer admittance
Short name: |Y_fs|
Definition: value as specified by level (minTypmax) of the modulus of the transfer admittance of a field effect transistor at specified frequency, drain current, gate-source voltage and drain-source voltage
Definition class: 0112/2///61360_4#AAA001component
Unit structure: S
Drawing reference: NR3..3.3ES2
Value format: {0112/2///61360_4#AAE029,0112/2///61360_4#AAE367,0112/2///61360_4#AAE376,0112/2///61360_4#AAE381}
Initial value: 0112/2///62720#UAA972 UAA972
Responsible committee: SC3D
Publisher: IEC
Published in: IEC 61360-4
Published in: DEPENDENT_P_DET
Status level: Standard
Version release date: 2015-08-17
Revision release date: 2011-08-31
Version initiation date: 2015-08-17
Original definition date: 1996-08-01
MDC_P001_6: 0112/2///61360_4#AAE396transfer admittance
MDC_P022: LEVEL(MIN,MAX,TYP) OF REAL_MEASURE_TYPE
MDC_P025_1: |Y_fs}|
MDC_P040: E45