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C_igv1rev 52011-08-31IEC 60747-8 (III.3.1.9) (1984)

input capacitance at gate

0112/2///61360_4#AAE655

maximum input capacitance at the gate of an N-channel field-effect transistor at specified drain current, drain-source voltage, gate-source voltage and frequency

Used by classes
1
property
Code
AAE655
Data type
LEVEL(MAX) OF REAL_MEASURE_TYPE
Unit
UAA144 UAA144
Used by classes (1)

Version history5#

  1. Current rev 05
    17 Aug 2015 · 15:40 UTC by BATCH 00000917
    View on cdd.iec.ch ↗
  2. superseded rev 04
    23 Jul 2015 · 11:08 UTC by BATCH 00000907
    ↓ Version JSON
    View on cdd.iec.ch ↗
  3. superseded rev 03
    22 Jul 2015 · 14:21 UTC by BATCH 00000904
    ↓ Version JSON
    View on cdd.iec.ch ↗
  4. superseded rev 02
    30 May 2012 · 15:03 UTC by BATCH 00000788
    ↓ Version JSON
    View on cdd.iec.ch ↗
  5. superseded rev 01
    30 May 2012 · 14:53 UTC by BATCH 00000787
    ↓ Version JSON
    View on cdd.iec.ch ↗

IEC CDD records every published revision of each entity — version number, status, timestamp, and the change request that introduced it. OpenCDD captures the full chain of custody from cdd.iec.ch; the entry marked Current is the one rendered on this page.

Metadata#

Source document
IEC 60747-8 (III.3.1.9) (1984)
Version
1
Revision
5
Status
Standard
Publisher
IEC
Published in
IEC 61360-4
Responsible committee
SC3D
Dates
  • Original: 1996-08-01
  • Current version: 2011-08-31
  • Current revision: 2015-08-17