C_igv1rev 52011-08-31IEC 60747-8 (III.3.1.9) (1984)

input capacitance at gate

0112/2///61360_4#AAE655

maximum input capacitance at the gate of an N-channel field-effect transistor at specified drain current, drain-source voltage, gate-source voltage and frequency

Used by classes: 1

property

Also appears in1#

Entities with the same name in other dictionaries:

iec-61360-4AAE655Propertie

Code: AAE655
Data type: LEVEL(MAX) OF REAL_MEASURE_TYPE
Unit: UAA144 UAA144

Used by classes (1)

AAA126field-effect transistor

Version history5#

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All properties24#

Version: 1
Revision: 5
Preferred name: input capacitance at gate
Short name: C_ig
Definition: maximum input capacitance at the gate of an N-channel field-effect transistor at specified drain current, drain-source voltage, gate-source voltage and frequency
Definition source: IEC 60747-8 (III.3.1.9) (1984)
Definition class: 0112/2///61360_4#AAA001component
Unit structure: F
Drawing reference: NR3..3.3ES2
Value format: {0112/2///61360_4#AAE029,0112/2///61360_4#AAE367,0112/2///61360_4#AAE376,0112/2///61360_4#AAE381}
Initial value: 0112/2///62720#UAA144 UAA144
Responsible committee: SC3D
Publisher: IEC
Published in: IEC 61360-4
Published in: DEPENDENT_P_DET
Status level: Standard
Version release date: 2015-08-17
Revision release date: 2011-08-31
Version initiation date: 2015-08-17
Original definition date: 1996-08-01
MDC_P001_6: 0112/2///61360_4#AAE655input capacitance at gate
MDC_P022: LEVEL(MAX) OF REAL_MEASURE_TYPE
MDC_P025_1: C_ig}
MDC_P040: E09