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$Dg_os/g_fsv1rev 52011-08-31

difference in penetration factor

0112/2///61360_4#AAE716

value as specified by level (minTypmax) of the ratio of the change of gate-source voltage difference to the change of drain-gate voltage of a dual field-effect transistor at specified constant drain current, drain-gate voltage and temperature of temperature type

Used by classes
1
property
Code
AAE716
Data type
LEVEL(MIN,MAX,TYP) OF INT_MEASURE_TYPE
Unit
UAD862 UAD862
Used by classes (1)

Version history5#

  1. Current rev 05
    17 Aug 2015 · 15:40 UTC by BATCH 00000917
    View on cdd.iec.ch ↗
  2. superseded rev 04
    23 Jul 2015 · 11:08 UTC by BATCH 00000907
    ↓ Version JSON
    View on cdd.iec.ch ↗
  3. superseded rev 03
    22 Jul 2015 · 14:21 UTC by BATCH 00000904
    ↓ Version JSON
    View on cdd.iec.ch ↗
  4. superseded rev 02
    30 May 2012 · 15:03 UTC by BATCH 00000788
    ↓ Version JSON
    View on cdd.iec.ch ↗
  5. superseded rev 01
    30 May 2012 · 14:53 UTC by BATCH 00000787
    ↓ Version JSON
    View on cdd.iec.ch ↗

IEC CDD records every published revision of each entity — version number, status, timestamp, and the change request that introduced it. OpenCDD captures the full chain of custody from cdd.iec.ch; the entry marked Current is the one rendered on this page.

Metadata#

Version
1
Revision
5
Status
Standard
Publisher
IEC
Published in
IEC 61360-4
Responsible committee
SC3D
Dates
  • Original: 1996-08-01
  • Current version: 2011-08-31
  • Current revision: 2015-08-17