V_GATv6rev 42011-08-31

anode-gate to anode voltage

0112/2///61360_4#AAE751

value of the anode-gate to anode voltage that will trigger a tetrode thyristor, at specified conditions

Used by classes: 1

property

Also appears in1#

Entities with the same name in other dictionaries:

iec-61360-4AAE751Propertie

Code: AAE751
Data type: LEVEL(MIN) OF REAL_MEASURE_TYPE
Unit: UAA296 UAA296

Used by classes (1)

AAA136reverse blocking thyristor

Version history4#

IEC CDD records every published revision of each entity — version number, status, timestamp, and the change request that introduced it. OpenCDD captures the full chain of custody from cdd.iec.ch; the entry marked Current is the one rendered on this page.

All properties23#

Version: 6
Revision: 4
Preferred name: anode-gate to anode voltage
Short name: V_GAT
Definition: value of the anode-gate to anode voltage that will trigger a tetrode thyristor, at specified conditions
Definition class: 0112/2///61360_4#AAA001component
Unit structure: V
Drawing reference: NR3 S..3.3ES2
Value format: {0112/2///61360_4#AAE271,0112/2///61360_4#AAE737}
Initial value: 0112/2///62720#UAA296 UAA296
Responsible committee: SC3D
Publisher: IEC
Published in: IEC 61360-4
Published in: DEPENDENT_P_DET
Status level: Standard
Version release date: 2015-08-17
Revision release date: 2011-08-31
Version initiation date: 2015-08-17
Original definition date: 2008-02-25
MDC_P001_6: 0112/2///61360_4#AAE751anode-gate to anode voltage
MDC_P022: LEVEL(MIN) OF REAL_MEASURE_TYPE
MDC_P025_1: V_GAT}
MDC_P040: E06