t_d(on)v1rev 52011-08-31

delay (on) time

0112/2///61360_4#AAE980

value as specified by level (minTypmax) of the time, measured between the 10% value of the gate-source voltage change and the 10% value of the drain current swing of a field-effect transistor at reference conditions

Used by classes: 2

property

Also appears in2#

Entities with the same name in other dictionaries:

Code: AAE980
Data type: LEVEL(MIN,MAX,TYP) OF REAL_MEASURE_TYPE
Unit: UAA972 UAA972

Used by classes (2)

Version history5#

IEC CDD records every published revision of each entity — version number, status, timestamp, and the change request that introduced it. OpenCDD captures the full chain of custody from cdd.iec.ch; the entry marked Current is the one rendered on this page.

All properties25#

Version: 1
Revision: 5
Preferred name: delay (on) time
Short name: t_d(on)
Definition: value as specified by level (minTypmax) of the time, measured between the 10% value of the gate-source voltage change and the 10% value of the drain current swing of a field-effect transistor at reference conditions
Remark: 1. The internal generator resistance and gate-source resistance are assumed to be 50 ohm.| 2. The reference conditions at specifying times for field-effect transistors are normally:| - drain-source voltage| - gate-source voltage| - drain current (dc)| - reference temperature
Definition class: 0112/2///61360_4#AAA001component
Unit structure: s
Drawing reference: NR3..3.3ES2
Value format: {0112/2///61360_4#AAE995}
Initial value: 0112/2///62720#UAA972 UAA972
Responsible committee: SC3D
Publisher: IEC
Published in: IEC 61360-4
Published in: DEPENDENT_P_DET
Status level: Standard
Version release date: 2015-08-17
Revision release date: 2011-08-31
Version initiation date: 2015-08-17
Original definition date: 1996-08-01
MDC_P001_6: 0112/2///61360_4#AAE980delay (on) time
MDC_P022: LEVEL(MIN,MAX,TYP) OF REAL_MEASURE_TYPE
MDC_P025_1: t_d(on)}
MDC_P025_3: t_d}
MDC_P040: T07