V_(BR)CEOv1rev 52011-08-31JEDEC 77/D19/1.2 (1981)

collector-emitter breakdown voltage

0112/2///61360_4#AAF066

minimum breakdown voltage between collector and emitter terminals of a bipolar transistor or photocoupler when the collector terminal is biased in the reverse direction with respect to the emitter terminal and when the base terminal is open-circuited, at specified collector current and temperature of a temperature type

Used by classes: 2

property

Also appears in1#

Entities with the same name in other dictionaries:

iec-61360-4AAF066Propertie

Code: AAF066
Data type: LEVEL(MIN) OF REAL_MEASURE_TYPE
Unit: UAA296 UAA296

Used by classes (2)

Version history5#

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All properties25#

Version: 1
Revision: 5
Preferred name: collector-emitter breakdown voltage
Short name: V_(BR)CEO
Definition: minimum breakdown voltage between collector and emitter terminals of a bipolar transistor or photocoupler when the collector terminal is biased in the reverse direction with respect to the emitter terminal and when the base terminal is open-circuited, at specified collector current and temperature of a temperature type
Definition source: JEDEC 77/D19/1.2 (1981)
Remark: The collector terminal is considered to be biased in the reverse direction when it is made positive for NPN transistors or negative for PNP transistors with respect to the emitter terminal.
Definition class: 0112/2///61360_4#AAA001component
Unit structure: V
Drawing reference: NR3 S..3.3ES2
Value format: {0112/2///61360_4#AAE406,0112/2///61360_4#AAE683,0112/2///61360_4#AAE685}
Initial value: 0112/2///62720#UAA296 UAA296
Responsible committee: SC3D
Publisher: IEC
Published in: IEC 61360-4
Published in: DEPENDENT_P_DET
Status level: Standard
Version release date: 2015-08-17
Revision release date: 2011-08-31
Version initiation date: 2015-08-17
Original definition date: 1996-08-01
MDC_P001_6: 0112/2///61360_4#AAF066collector-emitter breakdown voltage
MDC_P022: LEVEL(MIN) OF REAL_MEASURE_TYPE
MDC_P025_1: V_(BR)CEO}
MDC_P040: E06