t_rv1rev 42013-04-24IEC 60747-9 2007
rise time
0112/2///61360_4#AFD070
time interval required for the collector current to rise from the specified lower level to the specified upper level when the IGBT is switched from the off-state to the on-state
- Used by classes
- 1
Also appears in5#
Entities with the same name in other dictionaries:
- Code
AFD070- Data type
- LEVEL(TYP,MAX) OF REAL_MEASURE_TYPE
- Unit
- UAA972 UAA972
Version history4#
IEC CDD records every published revision of each entity — version number, status, timestamp, and the change request that introduced it. OpenCDD captures the full chain of custody from cdd.iec.ch; the entry marked Current is the one rendered on this page.
All properties18#
- Version
- 1
- Revision
- 4
- Preferred name
- rise time
- Short name
- t_r
- Definition
- time interval required for the collector current to rise from the specified lower level to the specified upper level when the IGBT is switched from the off-state to the on-state
- Definition source
- IEC 60747-9 2007
- Note
- Usually the lower and upper limits are 10 % and 90 % of the pulse amplitude.
- Definition class
- 0112/2///61360_4#AFA015insulated-gate bipolar transistor
- Unit structure
- s
- Initial value
- 0112/2///62720#UAA972 UAA972
- Published in
- NON_DEPENDENT_P_DET
- Status level
- Standard
- Version release date
- 2015-08-17
- Revision release date
- 2013-04-24
- Version initiation date
- 2015-08-17
- MDC_P001_6
- 0112/2///61360_4#AFD070rise time
- MDC_P022
- LEVEL(TYP,MAX) OF REAL_MEASURE_TYPE
- MDC_P025_1
- t_r