t_offv1rev 52011-08-31
turn-off time
0112/2///61360_4#AAE979
value as specified by level (minTypmax) of the time, measured between the 90% value of the gate-source voltage change and the 10% value of the drain current swing of a field-effect transistor at reference conditions
- Used by classes
- 2
- Code
AAE979- Data type
- LEVEL(MIN,MAX,TYP) OF REAL_MEASURE_TYPE
- Unit
- UAA972 UAA972
Version history5#
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Metadata#
- Remark
- 1. The internal generator resistance and the gate-source resistance are assumed to be 50 ohm.|2. t_off} = t_d(off)} + t_f}. t_d(off)} is also known as t_s} (storage time).|3. The reference conditions at specifying times for field-effect transistors are normally:| - drain-source voltage| - gate-source voltage| - drain current (dc)| - reference temperature
- Version
- 1
- Revision
- 5
- Status
- Standard
- Publisher
- IEC
- Published in
- IEC 61360-4
- Responsible committee
- SC3D
- Dates
- Original: 1996-08-01
- Current version: 2011-08-31
- Current revision: 2015-08-17